rie plasma etcher etchlab 200 (SENTECH CO LTD)

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SENTECH CO LTD rie plasma etcher etchlab 200
Rie Plasma Etcher Etchlab 200, supplied by SENTECH CO LTD, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/rie+plasma+etcher+etchlab+200/rie+plasma+etcher+etchlab+200/pmc11315035-79-21-27
Average 90 stars, based on 1 article reviews

rie plasma etcher etchlab 200 - by Bioz Stars, 2026-09

90/100 stars

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Clinical Proteomics:

Article Title: Hot Embossing to Fabricate Parylene-Based Microstructures and Its Impact on the Material Properties
Article Snippet: .. Doing so, the UNIVEX 450 vapor deposition system (Leybold GmbH, Cologne, Germany) was used, with chromium being coated at 5–6 Å/s and gold at 7–9 Å/s in a high-vacuum environment (≤10 −6 mbar). (d) Nickel electroforming followed, utilizing a boric acid containing nickel sulphamate electrolyte and current densities ranging from 0.1 A/dm 2 to 1.5 A/dm 2 to deposit an 800 μm to 1000 μm thick nickel layer on top of the master substrate. (e) The removal of the master substrate was carried out either by mechanically lifting off the silicon wafer or by etching in KOH, in the cases where mechanical lifting posed a risk of structural deformation or was unfeasible due to geometrical constraints. (f) Subsequently, the remaining antireflection and photoresist mask was also removed, requiring two etching steps: first with oxygen plasma at 100 W for 2 min using the RIE plasma etcher Etchlab 200 (SENTECH Instruments GmbH, Berlin, Germany), and then at 1200 W at 22 °C for 15 min using an R3T (Muegge GmbH, Reichelsheim (Odenwald), Germany). (g) The structure quality of the shim was assessed using SEM. (h) Finally, the remaining nickel block was then wire eroded to the desired height and final outer dimensions with a 200 μm brass wire at a tensile force of 900 J/mm 2 using a Mitsubishi DWC 90 SZ (Mitsubishi Electric Corporation, Tokyo, Japan), before transferring it for use in the hot embossing process. ..

Article Title: Hot Embossing to Fabricate Parylene-Based Microstructures and Its Impact on the Material Properties
Article Snippet: .. During pretreatment, these wafers underwent a cleaning stage using an oxygen plasma treatment at 100 W for 10 min, employing an RIE plasma etcher Etchlab 200 from SENTECH Instruments GmbH, Berlin, Germany. (a) This was followed by the application of an AZ Barli II-200 antireflection layer (manufactured: Merck Performance Materials GmbH, Wiesbaden, Germany; filled: MicroChemicals GmbH, Ulm, Germany). .. The layer was spin coated at 3000 rpm for 30 s and subsequently tempered on a hotplate at 200 °C for 60 s. A similar process was applied for a 10 μm photoresist layer of mr-X 10 (micro resist technology GmbH, Berlin, Germany) by spin coating at 2000 rpm for 60 s and tempering at 95 °C for 10 min to remove the solvent. (b) The next step involved patterning a 10.2 mm × 10.2 mm area of the photoresist layer with pillar structures with a diameter of 10 μm and 20 μm, as well as depths of 10 μm, 20 μm, and 30 μm.

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Article Title: Imaging a microfocus X-ray focal spot with a thin coded aperture.
Article Snippet: A reactive ion etching (RIE plasma etcher Etchlab 200, SENTECH Instruments GmbH) sequence was performed to remove the antireflection layer, before conducting the gold electroplating step.

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